Reconfigurable Circuits Using Magnetic Tunneling Junction Memories
Abstract
This paper presents the first results of our work to
research and develop new reconfigurable circuits and topologies based on
Magnetic RAM (MRAM) memory elements. This work proposes a coarse-grained
reconfigurable array using MRAM. A coarse-grained array, where each
reconfigurable element computes on 4-bit or larger input words, is more
suitable to execute data-oriented algorithms and is more able to exploit
large amounts of operation-level parallelism than common fine-grained
architectures. The architecture is organized as a one-dimensional array
of programmable ALU and the configuration bits are stored in MRAM. MRAM
provide non-volatility with cell areas and with access speeds comparable
to those of SRAM and with lower process complexity than FLASH memory.
MRAM can also be efficiently organized as multi-context
memories.
Origin | Files produced by the author(s) |
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